Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

Negative capacitance effect in semiconductor devices

Nontrivial capacitance behavior, including a negative capacitance (NC) effect, observed in a variety of semiconductor devices, is discussed emphasizing the physical mechanism and the theoretical interpretation of experimental data. The correct interpretation of NC can be based on the analysis of the time-domain transient current in response to a small voltage step or impulse, involving a selfco...

17 Life under Conditions of Ionizing Radiation

Life on Earth, throughout its almost 4 billion years history, has been shaped by interactions of the organisms with their environment. It has developed with an ever present radiation background. As a powerful mutagen it has contributed to biological evolution, however, it is potentially destructive for individual cells and organisms [1]. Radiation response differs extremely for different organi...

Defect Generation in Bipolar Devices by Ionizing Radiation

This paper reviews typical effects occurring in bipolar junction transistors (BJTs) due to gamma (γ) rays irradiation. The detrimental consequences of this interaction can be categorized into two: the transfer of energy to electrons due to ionization and electronic excitations; and also the transfer of energy to atomic nuclei. The radiation damage induced by this interaction was studied using i...

Total Ionizing Dose Radiation Effects on Germanium Pmos Devices

Ionizing radiation effects on MOS devices and ICs

The interaction of radiation with matter is a very broad and complex topic. In this chapter we try to analyse the problem with the aim of explaining, at least qualitatively, the more important aspects which are essential for a physical comprehension of the degradation observed in MOS devices and circuits when they are irradiated. In section 1.1 we introduce the effects of the interaction of var...